| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
366 pcs
|
366 pcs | On Request | 1 | On Request | On Request | 1650+ | On Request | On Request |
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The IPW60R165CP is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 600V and a continuous drain current of 21A at 25°C case temperature. The maximum on-resistance is 165mOhm at a gate drive of 10V and drain current of 12A.
This MOSFET has a typical gate charge of 52nC and input capacitance of 2000pF at 100V drain-source voltage. The maximum power dissipation is 192W at 25°C. The device is designed for through-hole mounting in a TO-247-3 package (PG-TO247-3-21 supplier package).
The operating junction temperature range is -55°C to 150°C. With a gate threshold voltage of 3.5V maximum, it requires a drive voltage of 10V for optimal on-resistance. The maximum gate-source voltage is ±20V.
600V minimum.
TO-247-3 (through-hole).
-55°C to 150°C (junction temperature).
RoHS status is listed as RoHS3 Compliant but unverified.
21A at 25°C case temperature.
165mOhm at 12A drain current and 10V gate voltage.
52nC maximum at 10V gate voltage.