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IPW60R125CP The IPW60R125CP is a 600V N-Channel MOSFET from Infineon Technologies. It features a continuous drain current of 25A and low on-resistance of 125mOhm.
Mfr Part #:

IPW60R125CP

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPW60R125CP is a 600V N-Channel MOSFET from Infineon Technologies. It features a continuous drain current of 25A and low on-resistance of 125mOhm.
✓ Total Stock: 12,000 pcs

IPW60R125CP Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
7,030 pcs
On Request
7030 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
970 pcs
On Request
970 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPW60R125CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPW60R125CP Description

Short technical summary and product information.

The IPW60R125CP is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for high-voltage switching applications. It has a maximum drain-source voltage of 600V and a continuous drain current of 25A at case temperature. The on-resistance is typically 125mOhm at a gate drive of 10V and drain current of 16A.

 

The MOSFET features a gate charge of 70nC and input capacitance of 2500pF, enabling efficient switching performance. The gate threshold voltage is 3.5V, and the maximum gate-source voltage is ±20V. Power dissipation is rated at 208W at case temperature.

 

This device is housed in a through-hole TO-247-3 package (PG-TO247-3-21) and operates over a junction temperature range of -55°C to 150°C. It is suitable for applications requiring high voltage and current handling in a compact footprint.

IPW60R125CP Quick Information

Product Type: MOSFET
Series: CoolMOS CP
Canonical Name: Infineon Technologies IPW60R125CP N-Channel MOSFET
Subcategory: Single MOSFET

IPW60R125CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R125CP Features

  • N-channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 25A.
  • Low on-resistance of 125 milliohms.
  • Gate charge of 70 nC for efficient switching.
  • Operating temperature range from -55°C to 150°C.

IPW60R125CP Applications

  • Suitable for high-voltage switching applications.
  • Used in power factor correction circuits.
  • Ideal for AC-DC converters.
  • Applied in motor control drives.

IPW60R125CP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPW60R125CP?

600V.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the package type?

TO-247-3 (PG-TO247-3-21).

Is the IPW60R125CP RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum continuous drain current?

25A at case temperature.

What is the on-resistance?

125 mOhm at Vgs=10V, Id=16A.

What is the gate charge?

70 nC at Vgs=10V.

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