| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R120P7 is an N-Channel Power MOSFET manufactured by Infineon Technologies. It offers a drain-to-source voltage rating of 600 V and a continuous drain current of 26 A (at case temperature). The device features a maximum on-resistance of 120 mOhm at a gate drive of 10 V and 8.2 A drain current.
Key electrical characteristics include a typical gate charge of 36 nC at 10 V, an input capacitance of 1544 pF at 400 V drain-source, and a gate threshold voltage of 4 V at 410 µA drain current. The power dissipation is rated at 95 W under case temperature conditions. The device operates over a junction temperature range of -55°C to 150°C.
Packaged in a TO-247-3 through-hole configuration (supplier package PG-TO247-3), this MOSFET is suitable for high-voltage switching applications requiring robust thermal performance and low conduction losses.
The drain-source voltage rating is 600 V.
The device is offered in a TO-247-3 through-hole package (supplier package PG-TO247-3).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant (unverified low confidence from source database).
The maximum on-resistance is 120 mOhm at a gate voltage of 10V and drain current of 8.2A.
The maximum gate threshold voltage is 4 V at a drain current of 410 µA.