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IPW60R099P7 The Infineon IPW60R099P7 is a 600V N-channel CoolMOS P7 power MOSFET. It offers 99mΩ maximum on-resistance and 100A pulsed drain current.
Mfr Part #:

IPW60R099P7

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW60R099P7 is a 600V N-channel CoolMOS P7 power MOSFET. It offers 99mΩ maximum on-resistance and 100A pulsed drain current.
✓ Total Stock: 8,684 pcs

IPW60R099P7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,700 pcs
On Request
5700 pcs On Request 1 On Request On Request 2017 On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,774 pcs
On Request
2774 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
210 pcs
On Request
210 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPW60R099P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Lead Style
Mounting Type
Package / Case
SVHC Present
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IPW60R099P7 Description

Short technical summary and product information.

The Infineon IPW60R099P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed for high voltage power applications, offering a combination of fast switching speeds and ease of use.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 99mΩ, and a typical Gate Charge (Qg) of 45nC. It supports a pulsed drain current (Id,pulse) of 100A and has an energy loss (Eoss) of 5.0µJ at 400V. The body diode exhibits a diF/dt rating of 900 A/µs.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, finding use in PC Silverbox, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS systems. It comes in a PG-TO 247-3 package suitable for through-hole mounting.

 

The CoolMOS P7 technology provides significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. It also offers excellent ESD robustness greater than 2kV (HBM).

IPW60R099P7 Quick Information

Product Type: N-channel Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPW60R099P7 N-channel Power MOSFET
Subcategory: Power MOSFET

IPW60R099P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R099P7 Features

  • 600V CoolMOS P7 N-channel MOSFET.
  • 650V maximum Drain-Source Voltage.
  • 99mΩ maximum On-Resistance.
  • 100A pulsed Drain Current.
  • PG-TO 247-3 package for through-hole mounting.

IPW60R099P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in power supply applications.
  • Ideal for server and telecom systems.
  • Applicable for UPS systems.
  • Designed for adapter and lighting applications.

IPW60R099P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPW60R099P7?

650V

What is the on-resistance of the IPW60R099P7?

99mΩ maximum

What is the typical gate charge of the IPW60R099P7?

45 nC

What is the pulsed drain current rating of the IPW60R099P7?

100 A

What package is the IPW60R099P7 available in?

PG-TO 247-3

What is the body diode di/dt rating of the IPW60R099P7?

900 A/µs

What is the output capacitance energy loss (Eoss) at 400V?

5 µJ

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