| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,463 pcs
|
1463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R099CP is an N-Channel MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 600V and a continuous drain current of 31A at case temperature.
Key electrical characteristics include a maximum on-resistance of 99mΩ at 18A drain current and 10V gate-source voltage. The gate charge is 80nC at 10V, and input capacitance is 2800pF at 100V drain-source voltage. The gate threshold voltage is 3.5V maximum at 1.2mA.
The device is housed in a TO-247-3 through-hole package with a supplier device package of PG-TO247-3. It can dissipate up to 255W at case temperature and operates over a junction temperature range of -55°C to 150°C.
600V.
31A at case temperature.
99mΩ maximum at 18A drain current and 10V gate-source voltage.
80nC maximum at 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package (PG-TO247-3).
Yes, RoHS3 compliant (unverified).