| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | 2101 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The Infineon IPW60R099C7 is an N-Channel enhancement-mode power MOSFET utilizing CoolMOS technology. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 22A at case temperature (Tc). The device offers a low on-resistance of 99 milliohms (maximum) at a gate voltage of 10V and a drain current of 9.7A. This MOSFET is designed for high efficiency in power conversion applications.
Key electrical characteristics include a gate charge of 42 nC at 10V and an input capacitance of 1819 pF at 400V drain-source voltage. The gate threshold voltage is 4V maximum at 490 µA drain current. Maximum power dissipation is 110W at case temperature, and the operating junction temperature range spans -55°C to 150°C. The device is packaged in a TO-247-3 through-hole case (supplier package PG-TO247), suitable for power board-level mounting.
The IPW60R099C7 is specified for RoHS3 compliance (unverified) and has MSL level 1 (unlimited) as per available data. It is used in switching power supplies, solar inverters, and other high-voltage power conversion topologies requiring low conduction and switching losses.
The maximum drain-to-source voltage (Vdss) is 600V.
The maximum continuous drain current (Id) is 22A at case temperature (Tc).
Maximum on-resistance is 99 mOhm at a drain current of 9.7A and gate-source voltage of 10V.
The operating junction temperature (TJ) range is -55°C to 150°C.
It is available in a TO-247-3 through-hole package (supplier device package PG-TO247).
It is listed as RoHS3 Compliant, but this status is unverified and has low confidence.
Maximum gate charge (Qg) is 42 nC at a gate-source voltage of 10V.