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IPW60R099C6 The Infineon Technologies IPW60R099C6 is an N-channel power MOSFET from the CoolMOS™ family. It offers a 600V breakdown voltage and a low on-resistance of 0.099 Ohms.
Mfr Part #:

IPW60R099C6

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPW60R099C6 is an N-channel power MOSFET from the CoolMOS™ family. It offers a 600V breakdown voltage and a low on-resistance of 0.099 Ohms.
✓ Total Stock: 133 pcs
$ Price Range: $2.40

IPW60R099C6 Available from 2 distributors

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132 pcs
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IPW60R099C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPW60R099C6 Description

Short technical summary and product information.

The Infineon Technologies IPW60R099C6 is a high-performance N-channel power MOSFET utilizing CoolMOS™ technology. It is designed for demanding power applications requiring high voltage and efficiency.

 

Key electrical characteristics include a maximum breakdown voltage of 600V and a typical continuous drain current of 30A at 25°C. The on-state resistance (Rds On) is specified at a low 0.099 Ohms at 10A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is typically 3.5V.

 

This MOSFET features typical input capacitance of 1300pF and output capacitance of 150pF. The typical gate charge is 55nC.

 

The IPW60R099C6 is housed in a TO-247-3 package and is designed for through-hole mounting. Its robust construction and electrical specifications make it suitable for various power conversion and switching applications.

IPW60R099C6 Quick Information

Product Type: MOSFET
Series: C6
Canonical Name: Infineon Technologies IPW60R099C6 CoolMOS N-channel Power MOSFET
Subcategory: N-Channel

IPW60R099C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R099C6 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW60R099C6 Features

  • 600V breakdown voltage capability.
  • Low 0.099 Ohm on-state resistance.
  • N-channel CoolMOS™ technology.
  • TO-247-3 through-hole package.
  • Suitable for power applications.

IPW60R099C6 Applications

  • Power supply circuits.
  • Switch mode power supplies.
  • Motor control applications.
  • DC-DC converters.

IPW60R099C6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IPW60R099C6 MOSFET?

The breakdown voltage is 600V.

What is the typical on-state resistance (Rds On) for the IPW60R099C6?

The typical on-state resistance is 0.099 Ohms at 10A and 10V.

What package type is the IPW60R099C6 MOSFET supplied in?

The IPW60R099C6 is supplied in a TO-247-3 package.

How is the IPW60R099C6 MOSFET mounted?

The IPW60R099C6 is designed for through-hole mounting.

What is the RoHS status of the IPW60R099C6?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPW60R099C6?

The Moisture Sensitivity Level is 1 Unlimited.

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