| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R080P7XKSA1 is a 600V N-channel power MOSFET from Infineon Technologies, built on the CoolMOS P7 superjunction platform. It is designed for high-voltage switching applications requiring low conduction and switching losses. Maximum drain-source voltage is 600V, with 37A continuous drain current at 25°C case temperature and 110A pulsed current capability.
Key electrical parameters include a maximum on-resistance of 80mΩ at Vgs=10V, gate charge of 51nC, and input capacitance of 2180pF at 400V drain-source voltage. The device has an ESD robustness above 2kV (HBM) and a body diode reverse recovery di/dt of 900A/µs. Maximum power dissipation is 129W at 25°C case temperature.
The IPW60R080P7XKSA1 comes in a TO-247-3 through-hole package (PG-TO247-3) and supports a junction temperature range of -55°C to 150°C. The CoolMOS P7 series is suitable for hard and soft switching topologies, including PFC, LLC converters, and PWM stages in power supplies, adapters, TVs, lighting, server, telecom, and UPS applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.06 | $7.06 |
| 30+ | $4.04 | $4.04 |
| 60+ | $3.68 | $3.68 |
| 120+ | $3.37 | $3.37 |
| 510+ | $2.88 | $2.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V. A minimum breakdown voltage of 650 V is specified at maximum junction temperature.
The IPW60R080P7XKSA1 is available in a TO-247-3 through-hole package (supplier device package PG-TO247-3).
The operating junction temperature range is -55°C to 150°C.
The component is listed as RoHS3 compliant in the existing database record.
The maximum on-resistance is 80 mΩ at Vgs = 10 V and ID = 11.8 A.
Continuous drain current is 37 A at case temperature 25°C; pulsed drain current is 110 A.
The gate charge is 51 nC at Vgs = 10 V.