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IPW60R080P7 The Infineon IPW60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
Mfr Part #:

IPW60R080P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
✓ Total Stock: 6,100 pcs

IPW60R080P7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,100 pcs
On Request
5100 pcs On Request 1 On Request On Request 2016 On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPW60R080P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Lead Spacing
Lead Style
Mounting Type
Package / Case
SVHC Present
Storage Temperature
Tape & Reel
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IPW60R080P7 Description

Short technical summary and product information.

The Infineon IPW60R080P7 is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage power applications. This 7th generation technology utilizes the superjunction principle to combine fast switching speeds with ease of use, featuring very low ringing tendency and outstanding body diode robustness.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 80mΩ, and a typical Gate Charge (Qg) of 51nC. It supports a pulsed drain current (Id,pulse) of 110A and has an energy in output capacitance (Eoss) of 5.5µJ at 400V. The body diode exhibits a dI/dt rating of 900A/µs.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, benefiting from its commutation ruggedness and reduced switching and conduction losses. It offers excellent ESD robustness exceeding 2kV (HBM).

 

The IPW60R080P7 is housed in a PG-TO 247-3 package, designed for through-hole mounting. Its design facilitates efficient thermal management and increased power density solutions.

IPW60R080P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPW60R080P7 600V CoolMOS P7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPW60R080P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R080P7 Features

  • 650V maximum Drain-Source Voltage.
  • 80mΩ maximum On-Resistance.
  • 51nC typical Gate Charge.
  • 110A pulsed Drain Current.
  • PG-TO 247-3 package for through-hole mounting.

IPW60R080P7 Applications

  • Suitable for PFC and LLC stages.
  • Designed for hard and soft switching.
  • Used in PC Silverbox and adapters.
  • Applicable for lighting and telecom systems.
  • Ideal for server and UPS applications.

IPW60R080P7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage (Vds) for the IPW60R080P7?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance (Rds(on)) of the IPW60R080P7 MOSFET?

The maximum On-Resistance (Rds(on)) is 80mΩ.

What is the typical Gate Charge (Qg) for this Infineon MOSFET?

The typical Gate Charge (Qg) is 51nC.

What is the package type for the IPW60R080P7?

The IPW60R080P7 is supplied in a PG-TO 247-3 package.

What is the RoHS status of the IPW60R080P7?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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