IPW60R070P6XKSA1 N-Channel 600V power MOSFET with 53.5A continuous drain current, 70mOhm on-resistance, in TO-247-3 package.
Mfr Part #:

IPW60R070P6XKSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V power MOSFET with 53.5A continuous drain current, 70mOhm on-resistance, in TO-247-3 package.
✓ Total Stock: 1,488 pcs
$ Price Range: $2.97 - $7.24

IPW60R070P6XKSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,260 pcs
1260 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
228 pcs
228 pcs On Request 1 On Request On Request 24+ On Request On Request

IPW60R070P6XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPW60R070P6XKSA1 Description

Short technical summary and product information.

The IPW60R070P6XKSA1 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P6 superjunction series. It features a maximum drain-source voltage of 600V (650V at Tj,max) and a continuous drain current rating of 53.5A. The device offers a low on-resistance of 70mOhm maximum at 20.6A drain current and 10V gate drive, with a typical gate charge of 100nC and input capacitance of 4750pF at 100V.

 

This MOSFET is designed for high-efficiency switching applications. Its superjunction technology provides low conduction and switching losses, making it suitable for PFC stages, hard-switching PWM converters, and resonant switching topologies. The device is qualified for industrial grade applications per JEDEC standards.

 

Package options include the TO-247-3 through-hole package (supplier package PG-TO247-3). The operating junction temperature range is -55°C to 150°C. The device is lead-free (Pb-free plating) and halogen-free mold compound, RoHS compliant.

IPW60R070P6XKSA1 Quick Information

Product Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Series: P6
Canonical Name: Infineon Technologies IPW60R070P6XKSA1 CoolMOS P6 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IPW60R070P6XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPW60R070P6XKSA1 Estimated Pricing

Qty Low High
1+ $7.24 $7.24
30+ $4.15 $4.15
60+ $3.78 $3.78
120+ $3.47 $3.47
510+ $2.97 $2.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW60R070P6XKSA1 Features

  • Superjunction CoolMOS P6 technology for low losses.
  • Maximum drain-source voltage of 600V.
  • Continuous drain current rating of 53.5A.
  • Low on-resistance of 70mOhm at 10V gate drive.
  • RoHS compliant and halogen-free package.

IPW60R070P6XKSA1 Applications

  • Ideal for PFC stages in power supplies.
  • Used in hard-switching PWM converters.
  • Suitable for resonant switching topologies.
  • Common in server, telecom, and lighting applications.

IPW60R070P6XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IPW60R070P6XKSA1?

The maximum drain-source voltage is 600V, with a drain-source breakdown voltage of 650V at Tj,max.

What is the package type?

The device comes in a TO-247-3 through-hole package (supplier package PG-TO247-3).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IPW60R070P6XKSA1 RoHS compliant?

Yes, it is RoHS3 compliant (unverified). The datasheet confirms lead-free plating and halogen-free mold compound.

What is the maximum drain current?

The maximum continuous drain current is 53.5A at case temperature. Pulsed drain current is 156A.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 70mOhm at 20.6A drain current and 10V gate drive.

What technology does the IPW60R070P6XKSA1 use?

It uses Infineon's CoolMOS P6 superjunction MOSFET technology.

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