| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,905 pcs
|
4905 pcs | On Request | 1 | On Request | On Request | 1630+ | On Request | On Request | |
|
1,751 pcs
|
1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
942 pcs
|
942 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPW60R070P6 is a high-voltage power MOSFET from the CoolMOS P6 series, utilizing superjunction technology. This transistor is designed for high efficiency in power management applications, offering extremely low switching and conduction losses.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 70 mΩ, and a typical Gate Charge (Qg) of 100 nC. It also features a pulsed drain current (ID,pulse) of 156A and an energy in output capacitance (Eoss) of 12.3 µJ at 400V.
The IPW60R070P6 is supplied in a PG-TO 247 package suitable for through-hole mounting. Its design emphasizes ease of use and drive, making it suitable for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages in power supplies, adapters, lighting, and server equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.
The maximum On-Resistance (Rds(on)) is 70 mΩ.
The typical Gate Charge (Qg) is 100 nC.
The IPW60R070P6 is supplied in a PG-TO 247 package.
The RoHS Status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH Status is listed as REACH Unaffected.