| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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88,000 pcs
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88000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
641 pcs
|
641 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R070P6 is a high-voltage N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P6 series built on superjunction technology. It is rated for a drain-source voltage of 600V (650V at maximum junction temperature) and a continuous drain current of 53.5A. The device features a very low typical on-resistance of 70mOhm at 10V gate drive, minimizing conduction losses.
Designed for fast switching applications, the IPW60R070P6 offers extremely low switching losses due to optimized gate charge (100nC) and output capacitance stored energy (12.3µJ at 400V). It exhibits high dv/dt ruggedness and high commutation ruggedness, making it suitable for hard and resonant switching topologies.
The MOSFET is housed in a standard through-hole TO-247-3 package (PG-TO247-3) with a maximum power dissipation of 391W. It is qualified for industrial-grade applications and is RoHS3 compliant with halogen-free mold compound. Typical applications include PFC stages, PWM converters, and power supplies for servers, telecom, and lighting.
The drain-source voltage rating is 600V, with a maximum of 650V at the maximum junction temperature.
The IPW60R070P6 is available in a TO-247-3 (PG-TO247-3) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 compliant, but this has not been independently verified.
The continuous drain current is 53.5A at case temperature (Tc).
The maximum on-resistance is 70 mOhm at a drain current of 20.6A and gate-source voltage of 10V.
The maximum gate charge is 100 nC at a gate-source voltage of 10V.