| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R070CFD7XKSA1 is a 650V, 31A N-Channel CoolMOS CFD7 MOSFET from Infineon Technologies, designed for soft switching topologies such as phase-shift full-bridge (ZVS) and LLC resonant converters. It utilizes superjunction technology to achieve a low on-resistance of 70mOhm maximum at 15.1A and 10V gate drive. The device features an ultra-fast body diode with best-in-class reverse recovery charge and high commutation ruggedness. Key electrical characteristics include a gate charge of 67nC at 10V, input capacitance of 2721pF at 400V Vds, and a maximum power dissipation of 156W at 25°C case temperature. The MOSFET is packaged in a TO-247-3 through-hole package (supplier package PG-TO247-3-21) and operates over a junction temperature range of -55°C to 150°C. It is qualified for industrial applications per JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.94 | $7.94 |
| 30+ | $4.58 | $4.58 |
| 60+ | $4.18 | $4.18 |
| 120+ | $3.84 | $3.84 |
| 510+ | $3.30 | $3.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum.
TO-247-3.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
70mOhm at 15.1A, 10V.
67 nC at 10V.
2721 pF at 400V.