| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,260 pcs
|
1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R060P7XKSA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the CoolMOS P7 7th generation superjunction platform. It is designed for high voltage power conversion applications requiring high efficiency and robustness.
Key electrical specifications include a drain-source breakdown voltage of 600V (650V at maximum junction temperature), a continuous drain current of 48A at 25°C case temperature, and a maximum drain-source on-resistance of 60 mOhm at 15.9A and 10V gate drive. The device features a maximum gate charge of 67 nC and an input capacitance of 2895 pF at 400V drain-source voltage.
The MOSFET is housed in a PG-TO247-3 through-hole package, suitable for industrial power designs. It offers ESD robustness greater than 2 kV (HBM) and a body diode with a reverse recovery di/dt rating of 900 A/µs. The device is fully qualified according to JEDEC for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.96 | $8.96 |
| 30+ | $5.19 | $5.19 |
| 60+ | $4.75 | $4.75 |
| 120+ | $4.37 | $4.37 |
| 510+ | $3.76 | $3.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V at 25°C junction temperature, and 650V at maximum junction temperature.
The maximum continuous drain current is 48A at a case temperature of 25°C.
The maximum drain-source on-resistance is 60 mOhm at a drain current of 15.9A and gate-source voltage of 10V.
It comes in a PG-TO247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.
The maximum gate charge is 67 nC at a gate-source voltage of 10V.