| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,750 pcs
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6750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R060C7 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS family designed for high-efficiency power conversion. It features a 600V drain-to-source breakdown voltage (Vdss) and supports a continuous drain current of 35A at case temperature (Tc). The maximum drain-source on-resistance is 60mOhm at Vgs=10V and Id=15.9A, ensuring low conduction losses.
Key electrical characteristics include an input capacitance of 2850pF at Vds=400V and a total gate charge of 68nC at Vgs=10V, which facilitate fast switching with manageable drive requirements. The gate threshold voltage is 4V maximum at Id=800µA, and the maximum gate-source voltage is ±20V. The device is rated for a drive voltage of 10V for achieving specified on-resistance.
The component is offered in a standard TO-247-3 through-hole package (PG-TO247-3), suitable for high-power board-level assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 162W at Tc.
Compliance data indicates RoHS3 compliance and REACH unaffected status, though these are unverified. The package has an MSL rating of 1 (unlimited). This MOSFET is suitable for demanding applications requiring high voltage and current handling with efficient switching performance.
600 V
TO-247-3 (through-hole)
-55°C to 150°C (junction temperature)
The part is listed as RoHS3 compliant, but this is unverified from official documentation.
60 mOhm at Id=15.9 A and Vgs=10 V
35 A at case temperature (Tc)
68 nC at Vgs=10 V