Mfr Part #:

IPW60R040CFD7

Mfr Name: Infineon

The Infineon IPW60R040CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It offers a low on-resistance of 40mΩ and a typical gate charge of 109nC.

✓ Total Stock: 1,257 pcs

$ Price Range: $2.40

IPW60R040CFD7 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,207 pcs On Request	1207 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	50 pcs On Request	50 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

IPW60R040CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	109 nC
Mounting Type	Through Hole

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IPW60R040CFD7 Description

Short technical summary and product information.

The Infineon IPW60R040CFD7 is a high-performance N-channel power MOSFET from the CoolMOS CFD7 series. Designed for high voltage applications, it features a maximum drain-source voltage of 650V and a low maximum on-resistance of 40mΩ. The device has a typical gate charge of 109nC and a pulsed drain current capability of 212A.

This MOSFET utilizes Infineon's CoolMOS technology, optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies. It boasts an ultra-fast body diode, best-in-class reverse recovery charge (Qrr), and improved turn-off behavior, contributing to highest efficiency in resonant topologies. The IPW60R040CFD7 is qualified for industrial applications according to JEDEC standards.

Packaged in a PG-TO 247-3 through-hole configuration, this MOSFET is suitable for designs requiring robust performance and high power density. Its features include excellent hard commutation ruggedness and high reliability for resonant switching applications.

IPW60R040CFD7 Quick Information

Product Type: MOSFET

Series: CoolMOS CFD7

Canonical Name: Infineon IPW60R040CFD7 N-channel Power MOSFET

Subcategory: N-channel Power MOSFET

IPW60R040CFD7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPW60R040CFD7 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW60R040CFD7 Features

650V drain-source voltage rating.
Low 40mΩ maximum on-resistance.
109nC typical gate charge.
Optimized for soft-switching topologies.
Ultra-fast body diode included.

IPW60R040CFD7 Applications

Suitable for ZVS applications.
Ideal for LLC resonant converters.
Used in server power supplies.
Applicable to telecom power systems.
Designed for EV charging solutions.

IPW60R040CFD7 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPW60R040CFD7?

The maximum drain-source voltage is 650V.

What is the maximum on-resistance of the IPW60R040CFD7 MOSFET?

The maximum on-resistance is 40 mΩ.

What is the typical gate charge for this Infineon MOSFET?

The typical gate charge is 109 nC.

What package type is the IPW60R040CFD7 MOSFET supplied in?

It is supplied in the PG-TO 247-3 package.

What are the primary applications for the IPW60R040CFD7?

It is suitable for soft-switching topologies like phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging.