| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The IPW60R037P7XKSA1 is an N-Channel power MOSFET from Infineon's CoolMOS P7 series, utilizing superjunction technology. It features a maximum drain-source voltage of 650V and a continuous drain current of 76A at Tc. The device offers a low on-resistance of 37mOhm maximum at 29.5A and 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a gate charge of 121nC and input capacitance of 5243pF at 400V, supporting fast switching in hard and soft switching topologies. The body diode is rugged with a recovery di/dt of 900A/µs, and the output capacitance energy is 12.4µJ at 400V.
The MOSFET is housed in a TO-247-3 through-hole package (supplier package PG-TO247-3) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 255W at Tc. The part is suitable for applications such as PFC stages, PWM converters, and resonant LLC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.73 | $10.73 |
| 30+ | $6.35 | $6.35 |
| 60+ | $5.83 | $5.83 |
| 120+ | $5.39 | $5.39 |
| 510+ | $4.68 | $4.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum.
TO-247-3 (through-hole).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
255W at Tc.