Mfr Part #:

IPW60R037P7

Mfr Name: Infineon

The Infineon IPW60R037P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.

✓ Total Stock: 1,377 pcs

IPW60R037P7 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,377 pcs On Request	1377 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPW60R037P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Gate Charge	121nC
Mounting Type	Through Hole
Package / Case	PG-TO 247-3
SVHC Present	Not Present

View Similar Products (0)

IPW60R037P7 Description

Short technical summary and product information.

The Infineon IPW60R037P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed using the superjunction principle, offering a revolutionary technology for high voltage power MOSFETs.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 37mΩ, and a typical Gate Charge (Qg) of 121nC. It also features a pulsed drain current (Id,pulse) of 280A and output capacitance (Eoss) of 12.4µJ at 400V.

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages due to its outstanding commutation ruggedness. It provides a significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. The device exhibits excellent ESD robustness greater than 2kV (HBM).

The IPW60R037P7 is housed in a PG-TO 247-3 package and is designed for through-hole mounting. Its benefits include ease of use, fast design-in, low ringing tendency, and simplified thermal management, making it suitable for a wide variety of applications including PC Silverbox, Adapters, LCD & PDP TVs, Lighting, Servers, Telecom, and UPS.

IPW60R037P7 Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPW60R037P7 N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IPW60R037P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPW60R037P7 Features

650V Drain-Source Voltage rating.
Low 37mΩ maximum On-Resistance.
Typical 121nC Gate Charge.
Excellent ESD robustness >2kV.
Suitable for PFC and LLC stages.

IPW60R037P7 Applications

Used in power factor correction stages.
Suitable for resonant switching stages.
Ideal for server power supplies.
Applied in telecom power systems.
Used in adapter power supplies.

IPW60R037P7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IPW60R037P7?

650V.

What is the on-resistance of this MOSFET?

37mΩ maximum.

What is the typical gate charge?

121nC.

What is the pulsed drain current rating?

280A.

What package does the IPW60R037P7 come in?

PG-TO 247-3 through-hole package.

What is the output capacitance energy at 400V?

12.4µJ.

What is the body diode diF/dt rating?

900A/µs.