| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPW60R031CFD7XKSA1 is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the CoolMOS CFD7 series. It is designed for high-voltage power conversion using superjunction technology.
Key electrical specifications include a maximum drain-to-source voltage of 650V, continuous drain current of 63A at case temperature, and a maximum on-resistance of 31mOhm at 32.6A gate drive. The device features a low gate charge of 141nC and input capacitance of 5623pF, enabling efficient switching performance.
This MOSFET is optimized for soft-switching resonant topologies such as phase-shift full-bridge and LLC converters. It includes an ultra-fast body diode with best-in-class reverse recovery charge for improved efficiency in these applications.
The device is housed in a TO-247-3 through-hole package (PG-TO247-3) and is qualified for industrial applications per JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.51 | $12.51 |
| 30+ | $7.50 | $7.50 |
| 60+ | $6.90 | $6.90 |
| 120+ | $6.40 | $6.40 |
| 510+ | $5.65 | $5.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current is 63A at case temperature (Tc).
The maximum on-resistance (Rds on) is 31mOhm at a drain current of 32.6A and gate-source voltage of 10V.
It comes in a TO-247-3 through-hole package, also known as PG-TO247-3.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be treated as low confidence.
It uses CoolMOS CFD7 superjunction technology, which is a MOSFET (Metal Oxide) design.