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IPW60R031CFD7 The Infineon IPW60R031CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It features low gate charge and best-in-class reverse recovery charge.
Mfr Part #:

IPW60R031CFD7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW60R031CFD7 is a 650V N-channel CoolMOS CFD7 power MOSFET. It features low gate charge and best-in-class reverse recovery charge.
✓ Total Stock: 3,466 pcs
$ Price Range: $2.40

IPW60R031CFD7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,466 pcs
On Request
3466 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPW60R031CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Mounting Type
SVHC Present
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IPW60R031CFD7 Description

Short technical summary and product information.

The Infineon IPW60R031CFD7 is a high-performance N-channel power MOSFET from the CoolMOS CFD7 series. Designed with superjunction technology, it is optimized for soft switching applications such as phase-shift full-bridge (ZVS) and LLC topologies, commonly found in server, telecom, and EV charging systems.

 

Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 31mΩ, and a typical Gate Charge (Qg) of 141nC. The device boasts an ultra-fast body diode, best-in-class reverse recovery charge (Qrr), and improved MOSFET reverse diode ruggedness. Its low FOM (RDS(on)*Qg) and RDS(on)*Eoss contribute to highest efficiency in resonant topologies.

 

Packaged in a PG-TO 247-3 through-hole configuration, the IPW60R031CFD7 offers excellent hard commutation ruggedness and reliability. It enables increased power density solutions, making resonant switching topologies more efficient, reliable, lighter, and cooler. This product is qualified for industrial applications according to JEDEC47/20/22 tests.

IPW60R031CFD7 Quick Information

Product Type: MOSFET
Series: CoolMOS CFD7
Canonical Name: Infineon IPW60R031CFD7 N-channel Power MOSFET
Subcategory: Power MOSFET

IPW60R031CFD7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R031CFD7 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPW60R031CFD7 Features

  • 650V Drain-Source Voltage rating.
  • 31mΩ maximum On-Resistance.
  • 141nC typical Gate Charge.
  • Optimized for soft switching.
  • PG-TO 247-3 package.

IPW60R031CFD7 Applications

  • Ideal for ZVS applications.
  • Suitable for LLC resonant topologies.
  • Used in server power supplies.
  • Applicable for telecom equipment.
  • Designed for EV charging systems.

IPW60R031CFD7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is 650V at maximum junction temperature.

What is the package type?

The package is PG-TO 247-3, through hole mount.

What is the maximum on-resistance?

The maximum on-resistance is 31mΩ.

What is the typical gate charge?

The typical gate charge is 141nC.

What is the pulsed drain current rating?

The pulsed drain current rating is 277A.

What is the output capacitance energy at 400V?

The output capacitance energy at 400V is 16.3µJ.

What is the body diode di/dt rating?

The body diode di/dt rating is 1300A/µs.

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