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IPW60R024P7 The Infineon IPW60R024P7 is a 600V N-channel CoolMOS P7 power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
Mfr Part #:

IPW60R024P7

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPW60R024P7 is a 600V N-channel CoolMOS P7 power MOSFET. It offers low switching and conduction losses with excellent ESD robustness.
✓ Total Stock: 1,000 pcs

IPW60R024P7 Available from 1 distributor

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1,000 pcs
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IPW60R024P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
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Package / Case
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IPW60R024P7 Description

Short technical summary and product information.

The Infineon IPW60R024P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation platform is designed using the superjunction principle, offering a combination of fast switching speeds and ease of use. It features extremely low switching and conduction losses, making power applications more efficient and compact.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 24mΩ, and a typical Gate Charge (Qg) of 164nC. The component also has a pulsed drain current (ID,pulse) of 386A and output capacitance (Eoss) of 16.7µJ at 400V.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, as well as PWM stages. Its benefits include low ringing tendency, outstanding body diode robustness against hard commutation, and excellent ESD capability (>2kV HBM). The package type is PG-TO 247-3, designed for through-hole mounting.

 

The IPW60R024P7 is fully qualified according to JEDEC for Industrial Applications.

IPW60R024P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPW60R024P7 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPW60R024P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R024P7 Features

  • 650V maximum Drain-Source Voltage.
  • 24mOhm maximum On-Resistance.
  • 164nC typical Gate Charge.
  • Excellent ESD robustness >2kV.
  • Suitable for hard and soft switching.

IPW60R024P7 Applications

  • Used in PFC stages.
  • Suitable for LLC resonant stages.
  • Applied in hard switching PWM stages.
  • Ideal for PC Silverbox applications.
  • Used in Server and Telecom power supplies.

IPW60R024P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPW60R024P7?

650V maximum.

What is the on-resistance of the IPW60R024P7?

24mΩ maximum.

What is the typical gate charge of the IPW60R024P7?

164nC.

What is the pulsed drain current rating of the IPW60R024P7?

386A maximum.

What is the output capacitance energy at 400V for the IPW60R024P7?

16.7µJ.

What is the body diode reverse recovery capability of the IPW60R024P7?

900A/µs.

What package is the IPW60R024P7 available in?

PG-TO 247-3.

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