| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,292 pcs
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2292 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPW60R024CFD7 is a high-performance N-channel power MOSFET utilizing CoolMOS CFD7 technology. Designed for high voltage applications, it features a maximum drain-source voltage of 650V and a low maximum on-resistance of 24mΩ. Its typical gate charge is 183nC, contributing to efficient switching.
This MOSFET is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies, commonly found in server, telecom, and EV charging systems. It boasts an ultra-fast body diode, best-in-class reverse recovery charge (Qrr), and improved turn-off behavior, leading to higher efficiency and reliability.
The IPW60R024CFD7 is supplied in a PG-TO 247-3 package, suitable for through-hole mounting. It is fully qualified according to JEDEC for industrial applications, offering excellent hard commutation ruggedness and enabling increased power density solutions.
The maximum drain-source voltage is 650V.
The maximum on-resistance is 24mΩ.
The typical gate charge is 183nC.
It is supplied in a PG-TO 247-3 package.
It is suitable for soft-switching topologies like phase-shift full-bridge (ZVS) and LLC applications, including server, telecom, and EV charging.