| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPW50R199CP is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies using CoolMOS™ technology. It is designed for high-voltage power conversion applications requiring high efficiency and robustness.
Key electrical specifications include a maximum drain-to-source voltage of 500V, a continuous drain current of 17A at case temperature, and a maximum drain-to-source on-resistance of 199mOhm at 9.9A and 10V gate drive. The device features a maximum gate charge of 45nC and an input capacitance of 1800pF, enabling efficient switching performance.
The MOSFET is housed in a TO-247-3 through-hole package (supplier device package PG-TO247-3-21) and supports a maximum power dissipation of 139W. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding thermal environments.
The maximum drain-to-source voltage is 500V.
The maximum drain current is 17A at case temperature (Tc).
The maximum drain-to-source on-resistance is 199mOhm at 9.9A drain current and 10V gate-source voltage.
It comes in a TO-247-3 through-hole package (supplier device package PG-TO247-3-21).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, though this is unverified.
The maximum power dissipation is 139W at case temperature.