| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IPU80R1K2P7AKMA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies, part of the CoolMOS P7 series. It is designed for high-voltage switching applications with a maximum drain-source voltage of 800V and continuous drain current of 4.5A at case temperature. The device features a maximum on-resistance of 1.2 Ohm at Vgs=10V and Id=1.7A, ensuring efficient power conversion.
This MOSFET utilizes super junction technology to achieve best-in-class figure of merit (FOM Rds(on)*Eoss) and reduced gate charge (Qg typ 11 nC) and output capacitance stored energy (Eoss 1.0 µJ at 500V). It includes integrated Zener diode ESD protection (Class 2 HBM) and has a typical threshold voltage of 3V with tight variation of ±0.5V.
The device is housed in a PG-TO251-3 package (TO-251-3 short leads, IPak) with through-hole mounting. It is suitable for hard and soft switching flyback topologies in LED lighting, low power chargers and adapters, audio, auxiliary power, and industrial power supplies. It can also be used in PFC stages for consumer applications and solar inverters.
The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 37W at case temperature. The device is RoHS3 compliant and has MSL 1 unlimited moisture sensitivity level (unverified).
| Qty | Low | High |
|---|---|---|
| 418+ | $0.72 | $0.72 |
| 1,500+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V.
PG-TO251-3 (TO-251-3 short leads, IPak, TO-251AA).
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 compliant (unverified).
11 nC at Vgs=10V.
1.2 Ohm at Id=1.7A, Vgs=10V.
Yes, it has integrated Zener diode ESD protection, Class 2 HBM.