| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,433 pcs
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5433 pcs | On Request | 1 | On Request | On Request | 15 | On Request | On Request |
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The IPU60R2K1CEBKMA1 is a 600V N-Channel power MOSFET from Infineon's CoolMOS CE series, built on superjunction (SJ) technology. It delivers a continuous drain current of 3.7 A at Tc=25°C (6 A pulsed) and a maximum drain-to-source voltage of 600 V (650 V at maximum junction temperature). The typical on-resistance is 2.1 Ohm at Vgs=10V and Id=760mA, with a gate charge of 6.7 nC and input capacitance of 140 pF at Vds=100V.
Designed for hard-switching and resonant topologies, this MOSFET features extremely low losses due to optimized Rdson*Qg figure of merit and low output capacitance stored energy (0.76 µJ at 400V). The product is Pb-free and halogen free, qualified for standard grade applications. The through-hole TO-251-3 (IPak) package with short leads is ideal for compact designs requiring high reliability.
| Qty | Low | High |
|---|---|---|
| 1,288+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600 V (650 V at maximum junction temperature).
The continuous drain current is 3.7 A at Tc=25°C (2.3 A at case temperature per DB entry).
The maximum drain-source on-resistance is 2.1 Ohm at Id=760 mA, Vgs=10 V.
It is available in a through-hole TO-251-3 (IPak) package with short leads (PG-TO251-3).
The operating junction temperature range is -40°C to +150°C.
The part is indicated as RoHS3 compliant (unverified) and is Pb-free and halogen free per the datasheet.