IPU60R2K1CEBKMA1 N-Channel 600V (650V Tj,max) Power MOSFET from Infineon CoolMOS CE series, rated 3.7A continuous drain current with 2.1 Ohm on-resistance, in through-hole TO-251-3 package.
Mfr Part #:

IPU60R2K1CEBKMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 600V (650V Tj,max) Power MOSFET from Infineon CoolMOS CE series, rated 3.7A continuous drain current with 2.1 Ohm on-resistance, in through-hole TO-251-3 package.
✓ Total Stock: 5,433 pcs
$ Price Range: $0.23

IPU60R2K1CEBKMA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,433 pcs
5433 pcs On Request 1 On Request On Request 15 On Request On Request

IPU60R2K1CEBKMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPU60R2K1CEBKMA1 Description

Short technical summary and product information.

The IPU60R2K1CEBKMA1 is a 600V N-Channel power MOSFET from Infineon's CoolMOS CE series, built on superjunction (SJ) technology. It delivers a continuous drain current of 3.7 A at Tc=25°C (6 A pulsed) and a maximum drain-to-source voltage of 600 V (650 V at maximum junction temperature). The typical on-resistance is 2.1 Ohm at Vgs=10V and Id=760mA, with a gate charge of 6.7 nC and input capacitance of 140 pF at Vds=100V.

 

Designed for hard-switching and resonant topologies, this MOSFET features extremely low losses due to optimized Rdson*Qg figure of merit and low output capacitance stored energy (0.76 µJ at 400V). The product is Pb-free and halogen free, qualified for standard grade applications. The through-hole TO-251-3 (IPak) package with short leads is ideal for compact designs requiring high reliability.

IPU60R2K1CEBKMA1 Quick Information

Product Type: Power MOSFET
Series: CE
Canonical Name: Infineon CoolMOS CE N-Channel Power MOSFET 600V 3.7A
Subcategory: N-Channel Single MOSFET

IPU60R2K1CEBKMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPU60R2K1CEBKMA1 Estimated Pricing

Qty Low High
1,288+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPU60R2K1CEBKMA1 Features

  • N-Channel 600V power MOSFET.
  • 3.7A continuous drain current rating.
  • 2.1 Ohm on-resistance at 10V drive.
  • Low gate charge of 6.7 nC typical.
  • Pb-free and halogen free plating.

IPU60R2K1CEBKMA1 Applications

  • Use in PFC boost converter stages.
  • Suitable for hard switching PWM stages.
  • Ideal for PC Silverbox power supplies.
  • Used in adapter and lighting applications.

IPU60R2K1CEBKMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 600 V (650 V at maximum junction temperature).

What is the continuous drain current rating?

The continuous drain current is 3.7 A at Tc=25°C (2.3 A at case temperature per DB entry).

What on-resistance does this MOSFET have?

The maximum drain-source on-resistance is 2.1 Ohm at Id=760 mA, Vgs=10 V.

What package does this device come in?

It is available in a through-hole TO-251-3 (IPak) package with short leads (PG-TO251-3).

What is the operating temperature range?

The operating junction temperature range is -40°C to +150°C.

Is this MOSFET RoHS compliant?

The part is indicated as RoHS3 compliant (unverified) and is Pb-free and halogen free per the datasheet.

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