| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,914 pcs
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9914 pcs | On Request | 1 | On Request | On Request | 1418+ | On Request | On Request |
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The IPU60R1K4C6 is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is built using advanced MOSFET technology and is designed for high-voltage switching applications. Key specifications include a drain-source voltage (Vdss) of 650V, continuous drain current (Id) of 3.2A at case temperature, and a maximum on-resistance (Rds(on)) of 1.4 Ohm at 1.1A and 10V gate drive. The device has a gate charge of 9.4 nC and input capacitance of 200 pF, enabling efficient switching in power conversion circuits. The MOSFET is housed in a through-hole TO-251-3 package (PG-TO-251-3-341) and operates over a junction temperature range of -55°C to 150°C. It is suitable for applications such as AC-DC power supplies, adapters, and LED lighting where high efficiency and reliability are required.
650V.
3.2A at case temperature.
1.4 Ohm maximum at 1.1A and 10V.
TO-251-3 (PG-TO-251-3-341).
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant (unverified).
3.5V maximum at 90µA.