| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
885 pcs
|
885 pcs | On Request | 1 | On Request | On Request | 1450+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPU60R1K0CE is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies using CoolMOS™ technology. It is designed for high-voltage switching applications requiring efficient power conversion.
Key electrical specifications include a drain-to-source voltage (Vdss) of 600V, a continuous drain current of 6.8A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 1 Ohm at a gate drive of 10V and 1.5A drain current. The device features a maximum gate threshold voltage of 3.5V and a total gate charge of 13 nC, enabling efficient switching performance.
The MOSFET is housed in a PG-TO251-3 package (TO-251AA compatible) with through-hole mounting, suitable for automated assembly. It can dissipate up to 61W of power and operates over a junction temperature range of -40°C to 150°C.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 6.8A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 1 Ohm at a drain current of 1.5A and gate-source voltage of 10V.
The operating junction temperature range is -40°C to 150°C.
It uses a PG-TO251-3 package (TO-251AA compatible) with through-hole mounting.
The maximum gate threshold voltage (Vgs(th)) is 3.5V at a drain current of 130µA.
The maximum power dissipation is 61W at a case temperature of 25°C.