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IPU09N03LB G

IPU09N03LB G is an N-channel MOSFET from Infineon Technologies with 30V drain-source voltage and 50A continuous drain current. It comes in a through-hole PG-TO251-3-21 package.

✓ Total Stock: 920 pcs

IPU09N03LB G Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	920 pcs On Request	920 pcs	On Request	1	On Request	On Request	06+	On Request	On Request

IPU09N03LB G Description

Short technical summary and product information.

The IPU09N03LB G is an N-channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS 2 series. It is designed for high-frequency DC/DC converters and features a logic-level gate drive, enabling operation with low gate voltages. The device offers excellent gate charge times on-resistance product (FOM), making it efficient for high-speed switching applications.

Key electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 50A at 25°C case temperature (42A at 100°C), and a pulsed drain current rating of 200A. The typical drain-source on-resistance is 7.6 mOhm at Vgs=10V, with a maximum of 9.3 mOhm. Gate threshold voltage ranges from 1.2V to 2V, and total gate charge is 13 nC maximum at Vgs=5V. The device can operate over a junction temperature range of -55°C to 175°C.

The IPU09N03LB G is supplied in the PG-TO251-3-21 package, a through-hole leaded package with short leads. The maximum power dissipation is 58W at 25°C case temperature, with a junction-to-case thermal resistance of 2.6 K/W. The device is RoHS3 compliant with Pb-free lead plating.

IPU09N03LB G Quick Information

Product Type: MOSFET (Metal Oxide)

Series: OptiMOS

Canonical Name: IPU09N03LB G N-Channel MOSFET, 30V, 50A, PG-TO251-3-21

Subcategory: N-Channel MOSFET

IPU09N03LB G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 3

REACH Status: REACH Unaffected

Lead Free: Yes

IPU09N03LB G Features

N-channel logic level MOSFET.
30V drain-source voltage rating.
50A continuous drain current at 25°C.
Low on-resistance: 7.6 mOhm typical at 10V.
High operating temperature up to 175°C.

IPU09N03LB G Applications

Ideal for high-frequency DC/DC converters.
Used in power management applications.
Suitable for load switching and motor control.

IPU09N03LB G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the IPU09N03LB G?

PG-TO251-3-21 (Supplier Device Package) or TO-251-3 Short Leads, IPak, TO-251AA.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the IPU09N03LB G RoHS compliant?

Yes, it is RoHS3 compliant per the datasheet.

What is the gate threshold voltage?

Minimum 1.2V, typical 1.6V, maximum 2V at Id=20µA.

What is the drain-source on-resistance?

7.6 mOhm typical, 9.3 mOhm maximum at Vgs=10V, Id=50A.

What is the maximum continuous drain current?

50A at case temperature 25°C, 42A at 100°C.

What is the total gate charge?

13 nC maximum at Vgs=5V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V (min), 10V (max)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF (typ), 1600 pF (max)
Lead Style	Short Leads
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	58 W
Rds On (Max) @ Id, Vgs	7.6 mOhm (typ) / 9.3 mOhm (max)
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.2V (min), 1.6V (typ), 2V (max)