| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
127 pcs
|
127 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The Infineon IPT60R102G7 is a 600V CoolMOS G7 SJ N-channel power MOSFET designed for high-current topologies. It features a low on-resistance (Rds(on)) of 102 mΩ and a continuous drain current (Id) of 66A.
This MOSFET utilizes Infineon's C7 GOLD CoolMOS technology, offering benefits such as improved Figure of Merit (FOM) for Rds(on) * Qg. The TOLL package provides enhanced thermal properties and includes a 4-pin Kelvin Source configuration for reduced parasitic source inductance.
Suitable for hard and soft switching applications, including PFC and high-performance LLC stages, the IPT60R102G7 is qualified according to JEDEC for industrial applications. Its design enables SMD solutions for high power SMPS in computing, server, telecom, and UPS systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
PG-HSOF-8, surface mount.
650 V.
102 mΩ.
66 A maximum, 32 A at Tj<150°C.
34 nC.
4 μJ.
740 A/μs.