| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,209 pcs
|
3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPT60R055CFD7XTMA1 is a high-voltage N-channel power MOSFET from Infineon Technologies, part of the CoolMOS CFD7 series. This device utilizes superjunction (SJ) technology to achieve low on-state resistance and high switching performance. It is rated for a drain-source voltage of 600V (650V breakdown) and a continuous drain current of 44A at case temperature. The maximum on-resistance is 55 mOhm at 10V gate drive. The MOSFET features a fast body diode with low reverse recovery charge, making it suitable for resonant topologies such as LLC converters and phase-shift full-bridge designs. It is packaged in an 8-PowerSFN surface-mount package (PG-HSOF-8-1) with a compact footprint for high power density. The operating junction temperature range is -55°C to 150°C. With a maximum power dissipation of 236W, this device is designed for industrial applications like server power supplies, telecom rectifiers, and EV charging systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.74 | $7.74 |
| 10+ | $5.23 | $5.23 |
| 50+ | $4.16 | $4.16 |
| 100+ | $3.81 | $3.81 |
| 500+ | $3.67 | $3.67 |
| 2,000+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600V, with a maximum breakdown voltage of 650V.
It is available in an 8-PowerSFN surface-mount package, also known as PG-HSOF-8-1.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this status is unverified.
The continuous drain current (Id) is 44A at case temperature, with a pulse drain current of 129A.
The maximum gate charge (Qg) is 67 nC at 10V gate-source voltage.
The maximum on-resistance (Rds(on)) is 55 mOhm at 15.1A drain current and 10V gate drive.