Mfr Part #:

IPT60R040S7XTMA1

Infineon IPT60R040S7XTMA1 is an N-channel power MOSFET with 600V drain-source voltage, 13A continuous drain current, and 40mOhm max on-resistance in a surface mount PG-HSOF-8-2 package.

✓ Total Stock: 3,020 pcs

$ Price Range: $4.03 - $9.68

IPT60R040S7XTMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,020 pcs On Request	3020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPT60R040S7XTMA1 Description

Short technical summary and product information.

The Infineon IPT60R040S7XTMA1 is an N-channel power MOSFET built on CoolMOS S7 superjunction technology. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 13A at Tc. The device achieves a maximum on-resistance of 40mOhm at 13A and 12V gate drive, enabling efficient conduction in low-frequency switching applications.

With a typical gate charge of 83nC and input capacitance of 3127pF at 300V, this MOSFET is optimized for static switching and high-current applications. It offers high pulse current capability of 207A and a body diode forward voltage of 0.82V. The device is rated for operation from -55°C to 150°C junction temperature and can dissipate up to 245W at Tc.

The MOSFET is supplied in an 8-lead PG-HSOF-8-2 surface mount package, which is MSL1 compliant and total Pb-free. The Kelvin source pin improves switching performance at high current. This device is fully qualified according to JEDEC for industrial applications.

IPT60R040S7XTMA1 Quick Information

Product Type: MOSFET

Series: S7

Canonical Name: IPT60R040S7XTMA1 Infineon Technologies CoolMOS S7 N-Channel 600V 13A MOSFET

Subcategory: N-Channel MOSFET

IPT60R040S7XTMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free

IPT60R040S7XTMA1 Estimated Pricing

Qty	Low	High
1+	$9.68	$9.68
10+	$6.63	$6.63
50+	$5.32	$5.32
100+	$4.94	$4.94
2,000+	$4.03	$4.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT60R040S7XTMA1 Features

600V maximum drain-to-source voltage.
13A continuous drain current at Tc.
40mOhm maximum on-resistance.
CoolMOS S7 superjunction technology.
Surface mount PG-HSOF-8-2 package.

IPT60R040S7XTMA1 Applications

Solid state relays and circuit breakers.
Line rectification in high-power applications.
Computing, telecom, UPS, and solar systems.
High-current static switching circuits.

IPT60R040S7XTMA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the IPT60R040S7XTMA1?

600V.

What is the continuous drain current rating?

13A at Tc.

What is the on-resistance of this MOSFET?

40mOhm maximum at 13A and 12V gate drive.

What package type does the IPT60R040S7XTMA1 come in?

Surface mount PG-HSOF-8-2 package (8-lead).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the device RoHS compliant?

Listed as RoHS3 compliant (low confidence).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	13 A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	12V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 12 V
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	3127 pF @ 300 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	245W (Tc)
Rds On (Max) @ Id, Vgs	40 mOhm @ 13A, 12V
Supplier Device Package	PG-HSOF-8-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 790µA