IPT60R028G7XTMA1 N-Channel MOSFET, 600V drain-source breakdown voltage, 75A continuous drain current, 28mOhm on-resistance, surface mount PG-HSOF-8 package.
Mfr Part #:

IPT60R028G7XTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 600V drain-source breakdown voltage, 75A continuous drain current, 28mOhm on-resistance, surface mount PG-HSOF-8 package.
✓ Total Stock: 1,340 pcs
$ Price Range: $9.38 - $19.61

IPT60R028G7XTMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,340 pcs
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IPT60R028G7XTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPT60R028G7XTMA1 Description

Short technical summary and product information.

The IPT60R028G7XTMA1 is an N-Channel power MOSFET from Infineon's CoolMOS G7 series. It features a 600V drain-source voltage (650V max at high temperature) and a 75A continuous drain current (87A at Tj<150°C). With a low on-resistance of 28mOhm at 10V gate drive, it is suitable for high-efficiency power conversion. Designed for hard and soft switching topologies such as PFC and LLC converters.

 

The device utilizes CoolMOS G7 technology for best-in-class figures of merit (RDS(on)*Eoss and RDS(on)*Qg). It includes a 4-pin Kelvin source configuration for reduced parasitic source inductance, enabling faster switching with less ringing. The PG-HSOF-8 (TOLL) package is MSL1 compliant and total Pb-free, offering improved thermal performance for surface mount assembly.

 

Typical applications include PFC stages and PWM stages (TTF, LLC) for high-power SMPS in computing, server, telecom, UPS, and solar systems. The MOSFET is fully qualified according to JEDEC for industrial applications.

IPT60R028G7XTMA1 Quick Information

Product Type: MOSFET - Single
Series: CoolMOS G7
Canonical Name: Infineon IPT60R028G7XTMA1 N-Channel CoolMOS G7 Power MOSFET
Subcategory: N-Channel Power MOSFET

IPT60R028G7XTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Total Pb-free

IPT60R028G7XTMA1 Estimated Pricing

Qty Low High
1+ $19.61 $19.61
10+ $13.93 $13.93
50+ $12.17 $12.17
500+ $11.48 $11.48
2,000+ $9.38 $9.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT60R028G7XTMA1 Features

  • N-Channel CoolMOS G7 power MOSFET.
  • 600V drain-source breakdown voltage.
  • 75A continuous drain current (87A at Tj<150°C).
  • Low on-resistance of 28mOhm typical.
  • Surface mount PG-HSOF-8 (TOLL) package.

IPT60R028G7XTMA1 Applications

  • PFC stages for high-power SMPS.
  • LLC resonant converters.
  • Server, telecom, and UPS power supplies.
  • Solar inverter applications.

IPT60R028G7XTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of IPT60R028G7XTMA1?

600 V (nominal) and 650 V maximum at high junction temperature (Tj,max).

What is the maximum continuous drain current?

75 A at case temperature (Tc) and 87 A at junction temperature below 150°C.

What is the on-resistance (Rds(on))?

Maximum 28 mOhm at Vgs=10V and Id=28.8A.

What package does the IPT60R028G7XTMA1 come in?

Surface mount PG-HSOF-8 (TOLL) package, also known as 8-PowerSFN.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this component RoHS compliant?

Yes, RoHS3 compliant (unverified) and total Pb-free per datasheet.

What is the gate charge (Qg)?

123 nC typical at Vgs=10V.

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