| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The Infineon IPT60R028G7 is a 600V CoolMOS G7 SJ N-channel Power MOSFET designed for high current applications. It features a low drain-source on-resistance of 28 mΩ and a maximum drain-source voltage of 650V.
This MOSFET utilizes Infineon's C7 GOLD CoolMOS technology, offering benefits such as improved figure of merit (FOM) for faster switching and higher efficiency. The TOLL package provides enhanced thermal properties and includes a 4-pin Kelvin Source configuration for reduced parasitic source inductance.
Potential applications include PFC stages and PWM stages for high power/performance SMPS, such as in computing, server, telecom, UPS, and solar systems. The device is fully qualified according to JEDEC for Industrial Applications.
The TOLL package is MSL1 compliant, Pb-free, and designed for surface mounting, enabling improved thermal performance and suitability for higher current designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) at Tj is 650 V.
The typical on-resistance (Rds(on)) is 28 mΩ.
The typical gate charge (Qg) is 123 nC.
The maximum continuous drain current (Id) is 245 A.
The package type is TOLL (PG-HSOF-8) for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
