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IPT111N20NFD The Infineon IPT111N20NFD is an N-channel MOSFET designed for high-performance applications. It offers a 200V drain-source voltage and a low on-resistance.
Mfr Part #:

IPT111N20NFD

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPT111N20NFD is an N-channel MOSFET designed for high-performance applications. It offers a 200V drain-source voltage and a low on-resistance.
✓ Total Stock: 1,442 pcs
$ Price Range: $0.99

IPT111N20NFD Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,431 pcs
On Request
1431 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
11 pcs
On Request
11 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPT111N20NFD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation
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IPT111N20NFD Description

Short technical summary and product information.

The Infineon IPT111N20NFD is a 200V N-channel Power MOSFET from the OptiMOS 3 family. It features a very low on-resistance of 11.1 mΩ (max) at 25°C and a continuous drain current capability of 96A at 25°C.

 

This MOSFET is optimized for hard commutation ruggedness and includes a fast diode with reduced Qrr. It operates at temperatures up to 175°C and is suitable for applications requiring high efficiency and reliability.

 

The IPT111N20NFD comes in a PG-HSOF-8 package, designed for surface mounting. It is Pb-free and Halogen-free, complying with RoHS standards.

IPT111N20NFD Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: IPT111N20NFD N-channel Power MOSFET
Subcategory: N-channel

IPT111N20NFD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPT111N20NFD Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT111N20NFD Features

  • 200V drain-source voltage rating.
  • Low 11.1mΩ maximum on-resistance.
  • High 96A continuous drain current.
  • Optimized for hard commutation.
  • Pb-free and Halogen-free.

IPT111N20NFD Applications

  • Used in high-power DC-DC converters.
  • Suitable for motor drive circuits.
  • Ideal for power supply designs.
  • Applicable in battery management systems.

IPT111N20NFD FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPT111N20NFD?

200 V.

What is the continuous drain current at 25°C?

96 A.

What is the operating temperature range?

-55 to 175 °C.

What package does the IPT111N20NFD come in?

PG-HSOF-8.

What is the maximum on-resistance?

11.1 mΩ.

What is the gate-source voltage range?

±20 V.

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