IPT059N15N3ATMA1 N-Channel MOSFET from Infineon, rated for 150V drain-source voltage and 155A continuous drain current. Features very low on-resistance of 5.9mOhm at 10V gate drive.
Mfr Part #:

IPT059N15N3ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon, rated for 150V drain-source voltage and 155A continuous drain current. Features very low on-resistance of 5.9mOhm at 10V gate drive.
✓ Total Stock: 3,020 pcs
$ Price Range: $2.62 - $6.99

IPT059N15N3ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPT059N15N3ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPT059N15N3ATMA1 Description

Short technical summary and product information.

The IPT059N15N3ATMA1 is an N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It is designed for high-frequency switching and synchronous rectification applications. The device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 155A at Tc=25°C. The maximum on-resistance (Rds(on)) is 5.9mOhm at Id=150A and Vgs=10V, enabling low conduction losses. The gate charge (Qg) is 92nC maximum at Vgs=10V, and the input capacitance (Ciss) is 7200pF at Vds=75V, making it suitable for high-speed switching. The device is housed in an 8-PowerSFN surface mount package (PG-HSOF-8-1) and supports an operating junction temperature range of -55°C to 175°C. It is RoHS3 compliant and halogen-free according to IEC61249-2-21. The MOSFET also offers a pulsed drain current capability of 620A and single-pulse avalanche energy of 520mJ, ensuring robustness in demanding conditions.

IPT059N15N3ATMA1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Infineon IPT059N15N3ATMA1 N-Channel MOSFET 150V 155A PG-HSOF-8
Subcategory: Single MOSFET

IPT059N15N3ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IPT059N15N3ATMA1 Estimated Pricing

Qty Low High
1+ $6.99 $6.99
10+ $4.70 $4.70
50+ $3.72 $3.72
100+ $3.40 $3.40
500+ $3.20 $3.20
2,000+ $2.62 $2.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT059N15N3ATMA1 Features

  • N-Channel MOSFET with 150V drain-source voltage.
  • Continuous drain current rating of 155A.
  • Very low on-resistance of 5.9mOhm.
  • Optimized for high-frequency switching applications.
  • RoHS and halogen-free compliant.

IPT059N15N3ATMA1 Applications

  • Ideal for synchronous rectification circuits.
  • Used in high-frequency switching power supplies.
  • Suitable for motor control applications.
  • Designed for telecom and server power systems.

IPT059N15N3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IPT059N15N3ATMA1?

The drain-source voltage (Vdss) is 150V.

What package is the IPT059N15N3ATMA1 available in?

It is available in an 8-PowerSFN surface mount package (PG-HSOF-8-1).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPT059N15N3ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the maximum drain current?

The continuous drain current is 155A at Tc=25°C.

What is the on-resistance?

The maximum on-resistance is 5.9mOhm at Id=150A and Vgs=10V.

What is the gate charge?

The maximum gate charge is 92nC at Vgs=10V.

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