| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPT044N15N5ATMA1 is an N-channel MOSFET from Infineon Technologies, part of the OptiMOS 5 series. It features a drain-to-source voltage rating of 150V and a continuous drain current of 174A at Tc=25°C. The device offers a very low on-resistance of 4.4mOhm maximum at Vgs=10V, enabling high efficiency in power conversion applications. The gate threshold voltage is 4.6V maximum at Id=221µA. The MOSFET is avalanche tested with a single pulse avalanche energy rating of 189mJ. It is housed in a PG-HSOF-8 surface mount package, which provides superior thermal resistance. The device is RoHS compliant, halogen-free, and has Pb-free lead plating. It is suitable for industrial applications and is fully qualified according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.61 | $6.61 |
| 10+ | $4.44 | $4.44 |
| 50+ | $3.50 | $3.50 |
| 100+ | $3.20 | $3.20 |
| 500+ | $2.98 | $2.98 |
| 2,000+ | $2.43 | $2.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
PG-HSOF-8 surface mount package.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant and halogen-free.
174A at Tc=25°C.
4.4mOhm maximum at Vgs=10V, Id=50A.
4.6V maximum at Id=221µA.