IPT026N10N5ATMA1 Infineon IPT026N10N5ATMA1 is an N-channel MOSFET with 100V drain-source voltage and 202A continuous drain current. It features very low on-resistance of 2.6mOhm and is housed in a PG-HSOF-8 surface-mount package.
Mfr Part #:

IPT026N10N5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPT026N10N5ATMA1 is an N-channel MOSFET with 100V drain-source voltage and 202A continuous drain current. It features very low on-resistance of 2.6mOhm and is housed in a PG-HSOF-8 surface-mount package.
✓ Total Stock: 5,020 pcs
$ Price Range: $2.00 - $5.72

IPT026N10N5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPT026N10N5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPT026N10N5ATMA1 Description

Short technical summary and product information.

The Infineon IPT026N10N5ATMA1 is a high-performance N-channel MOSFET built on OptiMOS 5 technology. It is designed for high-frequency switching and synchronous rectification applications. Key electrical specifications include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 202A at case temperature (Tc=25°C) and 27A at ambient temperature, and a very low maximum on-resistance (Rds(on)) of 2.6mOhm at Id=150A and Vgs=10V. The device features a typical gate charge (Qg) of 96nC (0V to 10V) and an output charge (Qoss) of 123nC, enabling efficient switching performance. It is capable of handling a pulsed drain current of 808A and has a single-pulse avalanche energy rating of 250mJ. The MOSFET is fully qualified according to JEDEC for industrial applications. It is housed in a PG-HSOF-8 surface-mount package (also known as 8-PowerSFN) and is RoHS3 compliant and halogen-free according to IEC61249-2-21. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 214W at Tc=25°C.

IPT026N10N5ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPT026N10N5ATMA1 N-Channel MOSFET, 100V, 202A, PG-HSOF-8
Subcategory: Single MOSFET

IPT026N10N5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPT026N10N5ATMA1 Estimated Pricing

Qty Low High
1+ $5.72 $5.72
10+ $3.81 $3.81
50+ $2.99 $2.99
100+ $2.72 $2.72
500+ $2.45 $2.45
2,000+ $2.00 $2.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT026N10N5ATMA1 Features

  • 100V drain-source voltage rating.
  • 202A continuous drain current at 25°C.
  • Very low 2.6mOhm on-resistance.
  • 100% avalanche tested for ruggedness.
  • RoHS and halogen-free compliant.

IPT026N10N5ATMA1 Applications

  • Ideal for high-frequency switching circuits.
  • Suitable for synchronous rectification applications.
  • Used in power management and DC-DC converters.
  • Applicable to industrial motor drives.

IPT026N10N5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPT026N10N5ATMA1?

100V.

What is the package type of this MOSFET?

PG-HSOF-8 (also known as 8-PowerSFN).

What is the operating junction temperature range?

-55°C to 175°C.

Is this component RoHS compliant?

Yes, RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the maximum continuous drain current?

202A at case temperature (Tc=25°C) and 27A at ambient temperature (Ta=25°C).

What is the typical on-resistance (Rds(on))?

Maximum 2.6mOhm at Id=150A, Vgs=10V.

What is the gate charge (Qg)?

Typical 96nC from 0V to 10V, maximum 120nC at Vgs=10V.

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