IPT020N10N5 The Infineon IPT020N10N5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a 100V drain-source breakdown voltage and a low 2 mΩ on-resistance.
Mfr Part #:

IPT020N10N5

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPT020N10N5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a 100V drain-source breakdown voltage and a low 2 mΩ on-resistance.
✓ Total Stock: 5,828 pcs
$ Price Range: $2.40

IPT020N10N5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,116 pcs
4116 pcs On Request 1 On Request On Request 23+ On Request On Request
Non-Authorised Inventory information
1,712 pcs
1712 pcs On Request 1 On Request On Request On Request On Request On Request

IPT020N10N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Power Dissipation

IPT020N10N5 Description

Short technical summary and product information.

The Infineon IPT020N10N5 is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. It is designed for demanding applications requiring efficient switching and low on-resistance.

 

Key electrical characteristics include a drain-source breakdown voltage of 100V and a typical on-resistance of 2 mΩ. The continuous drain current is rated at 260A at 25°C (Vgs=10V), with a reduced rating of 184A at 100°C. The gate-source voltage is rated for ±20V, and the power dissipation is 273W maximum.

 

This MOSFET features a typical gate charge of 155 nC, with a specific value of 122 nC for the 0V to 10V range. It is qualified for industrial applications according to JEDEC standards.

 

The IPT020N10N5 comes in a PG-HSOF-8 surface-mount package. It is Pb-free and Halogen-free, complying with RoHS3 standards.

IPT020N10N5 Quick Information

Product Type: MOSFET
Series: OptiMOS™ 5
Canonical Name: Infineon IPT020N10N5 N-channel MOSFET
Subcategory: N-channel

IPT020N10N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IPT020N10N5 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT020N10N5 Features

  • 100V drain-source breakdown voltage.
  • 2 mΩ typical on-resistance.
  • 260A maximum continuous drain current.
  • 155 nC typical gate charge.
  • PG-HSOF-8 surface mount package.

IPT020N10N5 Applications

  • Ideal for high-frequency switching applications.
  • Suitable for synchronous rectification circuits.
  • Used in industrial power conversion systems.
  • Designed for high-efficiency power supplies.

IPT020N10N5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPT020N10N5?

The drain-source breakdown voltage is 100 V.

What is the on-resistance of the IPT020N10N5?

The typical on-resistance is 2 mΩ.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 260 A at Vgs=10V and 25°C case temperature.

What is the gate-source voltage rating?

The gate-source voltage rating is ±20 V.

What is the maximum power dissipation?

The maximum power dissipation is 273 W.

What is the total gate charge?

The total gate charge is 155 nC typical.

What package is the IPT020N10N5 available in?

The IPT020N10N5 is available in a PG-HSOF-8 surface-mount package.

Home
Account

Categories