| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,116 pcs
|
4116 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,712 pcs
|
1712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The Infineon IPT020N10N5 is a high-performance N-channel MOSFET belonging to the OptiMOS™ 5 family. It is designed for demanding applications requiring efficient switching and low on-resistance.
Key electrical characteristics include a drain-source breakdown voltage of 100V and a typical on-resistance of 2 mΩ. The continuous drain current is rated at 260A at 25°C (Vgs=10V), with a reduced rating of 184A at 100°C. The gate-source voltage is rated for ±20V, and the power dissipation is 273W maximum.
This MOSFET features a typical gate charge of 155 nC, with a specific value of 122 nC for the 0V to 10V range. It is qualified for industrial applications according to JEDEC standards.
The IPT020N10N5 comes in a PG-HSOF-8 surface-mount package. It is Pb-free and Halogen-free, complying with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100 V.
The typical on-resistance is 2 mΩ.
The maximum continuous drain current is 260 A at Vgs=10V and 25°C case temperature.
The gate-source voltage rating is ±20 V.
The maximum power dissipation is 273 W.
The total gate charge is 155 nC typical.
The IPT020N10N5 is available in a PG-HSOF-8 surface-mount package.