Mfr Part #:

IPT020N10N3ATMA1

N-Channel MOSFET from Infineon with 100V drain-source voltage and 300A continuous drain current. Features ultra-low 2mOhm on-resistance in a compact 8-PowerSFN surface-mount package.

✓ Total Stock: 299 pcs

$ Price Range: $2.71 - $7.28

IPT020N10N3ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	299 pcs On Request	299 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

IPT020N10N3ATMA1 Description

Short technical summary and product information.

The Infineon IPT020N10N3ATMA1 is an N-Channel power MOSFET from the OptiMOS 3 family. It is designed for high-efficiency power conversion with a drain-source voltage rating of 100V and a continuous drain current of 300A at Tc=25°C.

Electrical characteristics include an ultra-low maximum on-resistance of 2mOhm at 150A and 10V gate drive. The gate charge is 156nC maximum at 10V, and input capacitance is 11200pF at 50V. The device can handle single-pulse avalanche energy up to 800mJ. Operating junction temperature ranges from -55°C to 175°C.

The MOSFET is housed in a surface-mount 8-PowerSFN package (PG-HSOF-8-1). It features Pb-free lead plating, is RoHS compliant, and halogen-free according to IEC61249-2-21. This combination of high current capability and low on-resistance makes it suitable for demanding power applications.

IPT020N10N3ATMA1 Quick Information

Product Type: N-Channel MOSFET

Series: OptiMOS 3

Canonical Name: Infineon IPT020N10N3ATMA1 N-Channel MOSFET

Subcategory: N-Channel MOSFET

IPT020N10N3ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPT020N10N3ATMA1 Estimated Pricing

Qty	Low	High
1+	$7.28	$7.28
10+	$4.89	$4.89
50+	$3.87	$3.87
100+	$3.54	$3.54
500+	$3.13	$3.13
2,000+	$2.71	$2.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT020N10N3ATMA1 Features

N-Channel MOSFET with 100V drain-source voltage.
Continuous drain current rating of 300A.
Ultra-low on-resistance of 2mOhm maximum.
Surface-mount 8-PowerSFN package.
RoHS compliant and halogen-free.

IPT020N10N3ATMA1 Applications

Used in high-efficiency power supply designs.
Suitable for motor drive and inverter circuits.
Ideal for DC-DC converter applications.
Applied in automotive and industrial systems.

IPT020N10N3ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPT020N10N3ATMA1?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current is 300A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2mOhm at Id=150A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the IPT020N10N3ATMA1 available in?

It comes in an 8-PowerSFN surface-mount package (PG-HSOF-8-1).

Is the IPT020N10N3ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant with Pb-free lead plating.

What is the gate charge of this MOSFET?

The maximum gate charge is 156nC at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	300 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	156 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	11200 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	2 mOhm
Storage Temperature	-55.0°C ~ 175.0°C
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.5 V