| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,312 pcs
|
1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Halogen Free | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation |
The Infineon IPT020N10N3 is an N-channel MOSFET designed for power management applications. It features a 100V drain-source voltage rating and an extremely low on-resistance of 2mΩ, contributing to excellent gate charge x RDS(on) product (FOM).
This MOSFET boasts a high continuous drain current capability of 300A at 25°C and 212A at 100°C, with a pulsed drain current of up to 1200A. It operates within a temperature range of -55°C to 175°C.
The IPT020N10N3 is housed in a PG-HSOF-8-1 package, suitable for surface mounting. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards, respectively.
Key performance parameters include a maximum drain-source voltage of 100V, a maximum on-resistance of 2mΩ, and a continuous drain current of 300A.
The maximum drain-source voltage is 100 V.
The maximum on-resistance is 2 mΩ.
The continuous drain current at 25°C is 300 A.
The operating temperature range is -55°C to 175°C.
The IPT020N10N3 has an N-channel.
The IPT020N10N3 is supplied in the PG-HSOF-8-1 package.