| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,820 pcs
|
2820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IPT015N10NF2SATMA1 is an N-Channel power MOSFET from Infineon Technologies, part of the StrongIRFET 2 family. It is rated for 100V drain-source voltage and 315A continuous drain current at Tc=25°C (35A at Ta=25°C). The device has a maximum on-state resistance of 1.5mΩ at Id=150A and Vgs=10V, with gate threshold voltage of 3.8V maximum at Id=267µA.
This surface-mount MOSFET is housed in an 8-PowerSFN package (supplier device package PG-HSOF-8). Key electrical characteristics include an output charge (Qoss) of 204nC, typical gate charge of 161nC at Vgs=10V, maximum gate charge of 242nC, and maximum input capacitance of 11000pF at Vds=50V. The device can handle pulsed drain currents up to 1260A and has a single-pulse avalanche energy rating of 406mJ. Operating junction temperature ranges from -55°C to 175°C.
With its 100V blocking voltage and 1.5mΩ on-resistance, this MOSFET is well suited for high-current switching applications where low conduction loss is important. The package supports surface-mount assembly and the device is qualified according to JEDEC JESD22 and J-STD-020 requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.88 | $5.88 |
| 10+ | $3.92 | $3.92 |
| 50+ | $3.08 | $3.08 |
| 100+ | $2.81 | $2.81 |
| 500+ | $2.54 | $2.54 |
| 1,800+ | $2.08 | $2.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
It is available in an 8-PowerSFN surface-mount package, with supplier device package designation PG-HSOF-8.
The operating junction temperature range is -55°C to 175°C.
According to the existing database, the part is RoHS3 compliant. This status is unverified and should be confirmed with Infineon or a distributor.
Continuous drain current is 315A at Tc=25°C and 35A at Ta=25°C, with a maximum pulsed drain current of 1260A.
Maximum on-state resistance is 1.5mΩ at Id=150A and Vgs=10V.
Typical gate charge is 161nC at Vgs=10V, with a maximum of 242nC.