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IPT012N08N5ATMA1 N-Channel MOSFET from Infineon Technologies, 80V drain-source voltage, 400A continuous drain current, 1.2mOhm on-resistance, in a PG-HSOF-8 surface mount package.
Mfr Part #:

IPT012N08N5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, 80V drain-source voltage, 400A continuous drain current, 1.2mOhm on-resistance, in a PG-HSOF-8 surface mount package.
✓ Total Stock: 857 pcs
$ Price Range: $3.12 - $7.21

IPT012N08N5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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857 pcs
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IPT012N08N5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Pins
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IPT012N08N5ATMA1 Description

Short technical summary and product information.

The IPT012N08N5ATMA1 is an N-channel MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It features a drain-source voltage of 80V and a continuous drain current of 400A at 25°C (283A at 100°C). The maximum on-resistance is 1.2mOhm at 150A and 10V gate drive.

 

This MOSFET offers low gate charge (223nC at 10V) and low input capacitance (17000pF at 40V), making it well-suited for high-frequency switching and synchronous rectification applications. It is 100% avalanche tested with a single-pulse avalanche energy rating of 817mJ.

 

The device is housed in a PG-HSOF-8 surface mount package (8-PowerSFN) and operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 375W. It is halogen-free per IEC61249-2-21 and RoHS compliant (Pb-free plating).

IPT012N08N5ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: IPT012N08N5
Canonical Name: Infineon Technologies IPT012N08N5ATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPT012N08N5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPT012N08N5ATMA1 Estimated Pricing

Qty Low High
1+ $7.21 $7.21
10+ $4.86 $4.86
100+ $3.53 $3.53
500+ $3.34 $3.34
1,000+ $3.12 $3.12
2,000+ $3.12 $3.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT012N08N5ATMA1 Features

  • High current N-channel MOSFET.
  • Very low on-resistance of 1.2mOhm.
  • Designed for high frequency switching.
  • 100% avalanche tested.
  • Halogen-free and RoHS compliant.

IPT012N08N5ATMA1 Applications

  • Used in high current switching circuits.
  • Ideal for synchronous rectification.
  • Suitable for DC-DC converters.
  • Power management applications.

IPT012N08N5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

80V.

What is the maximum continuous drain current?

400A at Tc=25°C, 283A at Tc=100°C.

What is the on-resistance?

1.2mOhm maximum at 150A and 10V gate drive.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the IPT012N08N5ATMA1 available in?

PG-HSOF-8 (8-PowerSFN) surface mount package.

Is this device RoHS compliant?

Yes, RoHS3 compliant (Pb-free plating) per datasheet statement.

What is the gate charge?

223nC maximum at 10V gate-source voltage.

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