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IPT012N08N5 The Infineon IPT012N08N5 is an 80V N-channel MOSFET designed for high frequency switching applications. It features a low on-resistance of 1.2 mΩ.
Mfr Part #:

IPT012N08N5

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPT012N08N5 is an 80V N-channel MOSFET designed for high frequency switching applications. It features a low on-resistance of 1.2 mΩ.
✓ Total Stock: 2,917 pcs
$ Price Range: $2.40

IPT012N08N5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
2,774 pcs
On Request
2774 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
143 pcs
On Request
143 pcs On Request 1 On Request On Request 23+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPT012N08N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Lead Style
Tape & Reel
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IPT012N08N5 Description

Short technical summary and product information.

The Infineon IPT012N08N5 is an N-channel MOSFET from the OptiMOS™ 5 series, rated for 80V.

 

This power transistor offers a very low on-resistance (Rds(on)) of 1.2 mΩ at a Vgs of 10V and 25°C, making it ideal for high-frequency switching applications and synchronous rectification. It boasts excellent gate charge x product (FOM) Rds(on) characteristics.

 

The device is 100% avalanche tested and qualified for industrial applications according to JEDEC standards. It is Pb-free and RoHS compliant, as well as Halogen-free.

 

The IPT012N08N5 comes in a PG-HSOF-8 package, suitable for various power management designs.

IPT012N08N5 Quick Information

Product Type: MOSFET
Series: OptiMOS™ 5
Canonical Name: Infineon OptiMOS™ 5 Power-Transistor, 80 V N-channel MOSFET
Subcategory: N-Channel

IPT012N08N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPT012N08N5 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT012N08N5 Features

  • 80V drain-source breakdown voltage.
  • Low 1.2 mOhm on-resistance.
  • High 400A continuous drain current.
  • Excellent gate charge x Rds(on) FOM.
  • Pb-free and Halogen-free.

IPT012N08N5 Applications

  • Ideal for high-current power conversion.
  • Suitable for motor drive applications.
  • Used in battery management systems.
  • Applicable in DC-DC converters.

IPT012N08N5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPT012N08N5?

80V minimum.

What is the typical on-resistance?

1.2mΩ at Vgs=10V, 25°C.

What is the maximum continuous drain current?

400A at Vgs=10V, 25°C.

What is the pulsed drain current rating?

1600A maximum at 25°C.

What is the single pulse avalanche energy rating?

817mJ at I=150A.

What is the typical gate charge?

208nC typical, with 178nC for 0V to 10V.

Is the IPT012N08N5 lead-free?

Yes, it is lead-free and halogen-free.

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