IPT010N08NM5ATMA1 Infineon IPT010N08NM5ATMA1 is an N-channel MOSFET with 80V drain-source voltage and 425A continuous drain current. It features very low on-resistance of 1.05 mΩ, ideal for high-frequency switching applications.
Mfr Part #:

IPT010N08NM5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPT010N08NM5ATMA1 is an N-channel MOSFET with 80V drain-source voltage and 425A continuous drain current. It features very low on-resistance of 1.05 mΩ, ideal for high-frequency switching applications.
✓ Total Stock: 5,020 pcs
$ Price Range: $3.48 - $7.85

IPT010N08NM5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPT010N08NM5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPT010N08NM5ATMA1 Description

Short technical summary and product information.

The Infineon IPT010N08NM5ATMA1 is an N-channel power MOSFET from the OptiMOS 5 family, designed for high-efficiency power conversion. It features a drain-source voltage rating of 80V and a maximum continuous drain current of 425A at Tc=25°C. The device achieves an ultra-low on-resistance of 1.05 mΩ (maximum at Vgs=10V, Id=150A), minimizing conduction losses. Key electrical characteristics include a typical gate charge of 178 nC, input capacitance of 16000 pF, and output charge of 207 nC. The MOSFET is 100% avalanche tested with an avalanche energy rating of 817 mJ. It is housed in a surface-mount PG-HSOF-8 package (8-PowerSFN) and supports a wide operating junction temperature range of -55°C to 175°C. The device is RoHS compliant and halogen-free, with Pb-free lead plating. It is suitable for high-frequency switching, synchronous rectification, and other power management applications demanding high current handling and low losses.

IPT010N08NM5ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPT010N08NM5ATMA1 N-Channel MOSFET, 80V, 425A, PG-HSOF-8
Subcategory: Power MOSFET

IPT010N08NM5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPT010N08NM5ATMA1 Estimated Pricing

Qty Low High
1+ $7.85 $7.85
10+ $5.32 $5.32
100+ $3.88 $3.88
500+ $3.75 $3.75
2,000+ $3.48 $3.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT010N08NM5ATMA1 Features

  • Very low on-resistance of 1.05 mΩ.
  • Rated for 80V drain-source voltage.
  • Continuous drain current up to 425A.
  • 100% avalanche tested.
  • RoHS and Halogen-free compliant.

IPT010N08NM5ATMA1 Applications

  • Ideal for high-frequency switching circuits.
  • Used in synchronous rectification applications.
  • Suitable for DC-DC converters.
  • Power management in industrial systems.

IPT010N08NM5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage (Vds) is 80 V.

What is the package type?

The package is 8-PowerSFN (PG-HSOF-8), surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the device RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the maximum continuous drain current?

The maximum continuous drain current is 425 A at Tc=25°C and 43 A at Ta=25°C.

What is the typical gate charge?

The typical gate charge is 178 nC; maximum is 223 nC at Vgs=10V.

What is the on-resistance?

The maximum drain-source on-resistance is 1.05 mΩ at Vgs=10V, Id=150A.

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