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IPT008N06NM5LFATMA1 N-Channel MOSFET from Infineon's OptiMOS 5 Linear FET series. Features 60V drain-source voltage, 454A continuous drain current, and ultra-low 0.8mΩ on-resistance.
Mfr Part #:

IPT008N06NM5LFATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon's OptiMOS 5 Linear FET series. Features 60V drain-source voltage, 454A continuous drain current, and ultra-low 0.8mΩ on-resistance.
✓ Total Stock: 1 pcs
$ Price Range: $3.09 - $6.79

IPT008N06NM5LFATMA1 Available from 1 distributor

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✓ Non-Authorised
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MW.FEP S.p.A. ✓
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1 pcs
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1 pcs On Request 1 On Request On Request On Request On Request On Request
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IPT008N06NM5LFATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPT008N06NM5LFATMA1 Description

Short technical summary and product information.

The IPT008N06NM5LFATMA1 is an N-channel MOSFET from Infineon Technologies, part of the OptiMOS 5 Linear FET family. It is designed for hot-swap and e-fuse applications, offering a wide safe operating area (SOA). The device is 100% avalanche tested and fully qualified according to JEDEC for industrial applications.

 

Key electrical specifications include a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) of 454A at Tc=25°C, and a pulsed drain current of 1816A. The maximum drain-source on-resistance (Rds(on)) is 0.8mΩ at Vgs=10V and Id=150A. Gate threshold voltage is 3.6V maximum, and total gate charge is 185nC at Vgs=10V. Input capacitance is 980pF at Vds=30V.

 

The device is housed in a PG-HSOF-8 surface-mount package (also known as 8-PowerSFN). It supports a maximum power dissipation of 278W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. The MOSFET is RoHS compliant, Pb-free, and halogen-free per IEC61249-2-21.

IPT008N06NM5LFATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5 Linear FET
Canonical Name: Infineon IPT008N06NM5LFATMA1 OptiMOS 5 Linear FET N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPT008N06NM5LFATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPT008N06NM5LFATMA1 Estimated Pricing

Qty Low High
1+ $6.79 $6.79
10+ $4.56 $4.56
100+ $3.30 $3.30
500+ $3.09 $3.09
2,000+ $3.09 $3.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT008N06NM5LFATMA1 Features

  • Ultra-low 0.8mΩ on-resistance at 10V gate drive.
  • High continuous drain current rating of 454A.
  • Wide safe operating area for linear applications.
  • 100% avalanche tested with 909mJ capability.
  • RoHS compliant and halogen-free package.

IPT008N06NM5LFATMA1 Applications

  • Ideal for hot-swap and e-fuse circuits.
  • Suitable for high-current power switching.
  • Used in industrial power management systems.
  • Applicable for battery protection and OR-ing.

IPT008N06NM5LFATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPT008N06NM5LFATMA1?

60V.

What package does the IPT008N06NM5LFATMA1 come in?

PG-HSOF-8 (also known as 8-PowerSFN), surface mount.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the IPT008N06NM5LFATMA1 RoHS compliant?

Yes, RoHS3 compliant with Pb-free plating and halogen-free per IEC61249-2-21.

What is the continuous drain current rating?

454A at Tc=25°C.

What is the gate threshold voltage?

Maximum 3.6V at Id=250µA.

What is the on-resistance at 10V gate drive?

0.8mΩ maximum at Id=150A.

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