Mfr Part #:

IPT007N06NATMA1

N-Channel MOSFET from Infineon with 60V drain-source voltage and 300A continuous drain current. Features ultra-low on-resistance of 0.75mΩ and is housed in a surface-mount 8-PowerSFN package.

✓ Total Stock: 77 pcs

$ Price Range: $3.36 - $6.79

IPT007N06NATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	77 pcs On Request	77 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPT007N06NATMA1 Description

Short technical summary and product information.

The IPT007N06NATMA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS series. It is designed for high-efficiency power conversion applications. Key electrical specifications include a drain-source voltage (Vds) of 60V, continuous drain current (Id) of 300A at Tc=25°C, and a maximum on-resistance (Rds(on)) of 0.75mΩ at Vgs=10V and Id=150A. The device features a gate threshold voltage (Vgs(th)) of 3.3V max at Id=280µA and a total gate charge (Qg) of 287nC at Vgs=10V. Input capacitance (Ciss) is 16000pF at Vds=30V. The MOSFET is capable of dissipating up to 375W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. It is housed in a surface-mount 8-PowerSFN package (PG-HSOF-8-1) and is RoHS compliant and halogen-free per IEC61249-2-21. The device is 100% avalanche tested and qualified according to JEDEC standards. Typical applications include high-current power supplies, DC-DC converters, and motor drives.

IPT007N06NATMA1 Quick Information

Product Type: N-Channel MOSFET

Series: OptiMOS

Canonical Name: Infineon IPT007N06NATMA1 N-Channel MOSFET, 60V, 300A, 8-PowerSFN

Subcategory: N-Channel MOSFET

IPT007N06NATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPT007N06NATMA1 Estimated Pricing

Qty	Low	High
1+	$6.79	$6.79
10+	$4.48	$4.48
100+	$3.39	$3.39
500+	$3.36	$3.36
2,000+	$3.36	$3.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT007N06NATMA1 Features

Ultra-low on-resistance of 0.75mΩ.
Rated for 60V drain-source voltage.
Supports 300A continuous drain current.
Surface-mount 8-PowerSFN package.
100% avalanche tested for reliability.

IPT007N06NATMA1 Applications

Ideal for high-current power supplies.
Used in DC-DC converter designs.
Suitable for motor drive circuits.
Applicable in OR-ing and load switch.

IPT007N06NATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

60V.

What package does the IPT007N06NATMA1 come in?

8-PowerSFN (PG-HSOF-8-1) surface-mount package.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the IPT007N06NATMA1 RoHS compliant?

Yes, RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the maximum on-resistance?

0.75mΩ at Vgs=10V, Id=150A.

What is the gate threshold voltage?

3.3V max at Id=280µA.

What is the continuous drain current rating?

300A at Tc=25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	300 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	287 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	16000 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	0.75 mΩ
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	PG-HSOF-8-1
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.3 V