Mfr Part #:

IPT007N06N

Mfr Name: Infineon

The Infineon IPT007N06N is an N-channel Power MOSFET with a 60V drain-source voltage and a maximum on-resistance of 0.75 mΩ. It is supplied in a PG-HSOF-8 package.

✓ Total Stock: 4,896 pcs

$ Price Range: $2.12

IPT007N06N Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,645 pcs On Request	2645 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	251 pcs On Request	251 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

IPT007N06N Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Gate Charge	216 nC
Halogen Free	Halogen Free
Mounting Type	Surface Mount
Power Dissipation	375 W

View Similar Products (0)

IPT007N06N Description

Short technical summary and product information.

The Infineon IPT007N06N is a high-performance N-channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage (VDS) of 60V and a low maximum on-resistance (RDS(on)) of 0.75 mΩ at a gate-source voltage (VGS) of 10V. The continuous drain current (ID) is rated at 486A at 25°C case temperature.

This MOSFET is 100% avalanche tested and offers superior thermal resistance. It is qualified according to JEDEC standards for target applications. The device is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.

The IPT007N06N is housed in a PG-HSOF-8 package, suitable for surface mounting. Its robust design and high current handling capabilities make it suitable for various power electronics applications.

IPT007N06N Quick Information

Product Type: N-channel Power MOSFET

Canonical Name: Infineon IPT007N06N N-channel Power MOSFET

Subcategory: N-channel

IPT007N06N Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1

REACH Status: REACH Unaffected

Lead Free: No

IPT007N06N Estimated Pricing

Qty	Low	High
1+	$2.12	$2.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPT007N06N Features

N-channel OptiMOSTM Power MOSFET
60V drain-source breakdown voltage
0.75 mΩ maximum on-resistance
486A maximum continuous drain current
PG-HSOF-8 package for surface mounting

IPT007N06N Applications

Suitable for high-power switching applications
Designed for efficient power conversion
Robust thermal performance for demanding use
Automotive and industrial power systems

IPT007N06N FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (VDS) of the IPT007N06N?

The maximum drain-source voltage is 60 V.

What is the on-resistance of the IPT007N06N?

The maximum on-resistance is 0.75 mΩ at VGS=10 V, ID=486 A.

What is the continuous drain current rating of the IPT007N06N?

The continuous drain current is 486 A at TC=25°C, and 371 A at TC=100°C.

What package does the IPT007N06N come in?

The device is packaged in a PG-HSOF-8 surface mount package.

What is the operating temperature range of the IPT007N06N?

The operating junction and storage temperature range is -55°C to 175°C.

What is the maximum power dissipation of the IPT007N06N?

The maximum power dissipation is 375 W at TC=25°C.

What is the avalanche energy rating of the IPT007N06N?

The avalanche energy is 1100 mJ at ID=150 A, RGS=25 Ω.