| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
390 pcs
|
390 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
136 pcs
|
136 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge |
The Infineon IPT004N03L is a high-performance N-channel OptiMOSTM Power MOSFET. It is specifically optimized for e-fuse and ORing applications, offering a very low on-resistance of 0.4 mΩ at a gate-source voltage of 4.5V. This MOSFET can handle a continuous drain current of up to 300A under various conditions and has a maximum drain-source voltage rating of 30V.
Key features include 100% avalanche tested for reliability and superior thermal resistance. The device operates within a temperature range of -55°C to 150°C. It is supplied in the PG-HSOF-8-1 package, suitable for surface mounting.
The IPT004N03L is qualified according to JEDEC standards for target applications and is Pb-free, making it RoHS compliant. Its robust design and electrical characteristics make it a reliable choice for power management solutions.
The maximum drain-source voltage (VDS) is 30V.
The package is PG-HSOF-8-1.
The operating and storage temperature range is -55°C to 150°C.
The continuous drain current (ID) is 300A at TC=25°C with VGS=10V.
The on-resistance (RDS(on)) is 0.4 mOhm maximum at VGS=4.5V.
The gate charge (QG) from 0V to 10V is 252 nC.