| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,175 pcs
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2175 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The IPS65R950C6 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for high-voltage switching applications.
Key electrical specifications include a maximum drain-source voltage of 650V, continuous drain current of 4.5A at Tc, and a maximum on-resistance of 950mOhm at Vgs=10V and Id=1.5A. The gate charge is 15.3nC at 10V, and input capacitance is 328pF at Vds=100V. The device can dissipate up to 37W at Tc and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is offered in a TO-251-3 (IPak) through-hole package, with a supplier device package of PG-TO251. It is suitable for applications requiring high efficiency and reliability in power conversion circuits.
Compliance information indicates RoHS3 compliance and MSL level 1, though these are unverified. The part is cross-referenced with Digi-Key part number 2156-IPS65R950C6-ND.
650V.
TO-251-3 (IPak) through-hole package.
-55°C to 150°C junction temperature.
It is listed as RoHS3 compliant, but this is unverified.
4.5A at Tc.
950mOhm at 1.5A, 10V.
15.3nC at 10V.