| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPS50R520CP is an N-Channel enhancement mode power MOSFET from Infineon's CoolMOS CP series, designed for high efficiency power conversion. It is rated for a maximum drain-source voltage of 550V and a continuous drain current of 7.1A at 25°C case temperature (4.5A at 100°C). The typical on-resistance is 470 mΩ (520 mΩ maximum) at Vgs=10V and Id=3.8A. The device offers a low gate charge of 13 nC typical, enabling fast switching with reduced gate drive losses. It is housed in a through-hole PG-TO251-3-11 package with stub leads, suitable for automated assembly. The part is RoHS3 compliant with Pb-free lead plating. Typical applications include hard and soft-switching power supplies, PFC stages, and lamp ballasts.
| Qty | Low | High |
|---|---|---|
| 1+ | $300.00 | $300.00 |
| 1,500+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 550V at Tj=25°C.
The continuous drain current is 7.1A at Tc=25°C and 4.5A at Tc=100°C.
The part is supplied in a through-hole PG-TO251-3-11 IPak package with stub leads.
The junction operating temperature range is -55°C to +150°C.
Yes, the device is RoHS3 compliant with Pb-free lead plating as stated on the datasheet.
The typical gate charge is 13 nC at Vgs=10V.
The maximum thermal resistance junction-to-case is 1.9 K/W.